New chemical solution process for fabricating copper layer on zinc oxide film

Authors
Izaki, M Murasumi, A Chigane, M Ishikawa, M Yamashita, M Katayama, J Takahashi, H Nakamura, H
Citation
M. Izaki et al., New chemical solution process for fabricating copper layer on zinc oxide film, EL SOLID ST, 3(11), 2000, pp. 501-503
Citations number
8
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
3
Issue
11
Year of publication
2000
Pages
501 - 503
Database
ISI
SICI code
1099-0062(200011)3:11<501:NCSPFF>2.0.ZU;2-I
Abstract
Fabrication of thin Cu layer on a zinc oxide (ZnO) film was performed by a novel ambient temperature chemical solution process. The process consisted of two steps, introduction of Cu ion into ZnO film by immersing in an aqueo us copper( II) sulfate solution, and reduction of Cu ion to metallic Cu by immersing in an aqueous potassium borohydride (KBH4) solution. The resultan t Cu layer showed resistivity of 2.8 x 10(-4) Omega cm. (C) 2000 The Electr ochemical Society. S1099-0062(00)08-015-9. All rights reserved.