Formation of porous layers with different morphologies during anodic etching of n-InP

Authors
Langa, S Tiginyanu, IM Carstensen, J Christophersen, M Foll, H
Citation
S. Langa et al., Formation of porous layers with different morphologies during anodic etching of n-InP, EL SOLID ST, 3(11), 2000, pp. 514-516
Citations number
17
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
3
Issue
11
Year of publication
2000
Pages
514 - 516
Database
ISI
SICI code
1099-0062(200011)3:11<514:FOPLWD>2.0.ZU;2-P
Abstract
Two different morphologies of porous layers were observed in (100)-oriented n-InP anodically etched in an aqueous solution of HCl. At high current den sity (60 mA/cm(2)) anodization leads to the formation of so-called current- line oriented pores. When the current density decreased to values lower tha n 5 mA/cm(2) the morphology of the porous layers sharply changed and the po res began to grow along definite <111> crystallographic directions. (C) 200 0 The Electrochemical Society. S1099-0062(00)06-078-8. All rights reserved.