Improving single-mode VCSEL performance by introducing a long monolithic cavity

We report on the improvement of several selectively oxidized vertical-cavit y surface emitting laser characteristics by introducing a long monolithic c avity. The samples compared are grown with various cavity lengths using sol id-source MBE. The 980 nm-regime is chosen as emission wavelength to facili tate growth by using binary GaAs cavity spacers. A record high single-trans verse mode output power of 5 mW at a series resistance of 98 Ohm is obtaine d for a 7-mu m aperture device with a 4-mu m cavity spacer. Using an 8-mu m cavity spacer, devices up to 16-mu m aperture diameter emit 1.7 mW of sing le-mode power with a full-width at half-maximum far-held angle below 3.8 de grees.