GaN0.011P0.989-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates

Novel red light-emitting diodes (LEDs) based on GaN0.011P0.989-GaP double-h eterostructure (DH) directly grown on (100) GaP substrates have been fabric ated for the first time. The samples were grown by gas-source molecular bea m epitaxy with an RF nitrogen radical beam source to incorporate N in GaP. Compared to conventional GaAs-based AlGaInP red LED's, this novel LED struc ture eliminates the complicated steps of etching the light-absorption GaAs substrate and wafer-bonding to a transparent GaP substrate. Based on the un coated devices made with the heterojunction bipolar transistor masks, the e mission efficiency of the DH LEDs is 20 times stronger than that of a GaNP pn homojunction diode.