InGaAsSb-AlGaAsSb distributed-feedback lasers emitting at 1.72 mu m

Authors
Werner, R Bleuel, T Hofmann, J Brockhaus, M Forchel, A
Citation
R. Werner et al., InGaAsSb-AlGaAsSb distributed-feedback lasers emitting at 1.72 mu m, IEEE PHOTON, 12(8), 2000, pp. 966-968
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
8
Year of publication
2000
Pages
966 - 968
Database
ISI
SICI code
1041-1135(200008)12:8<966:IDLEA1>2.0.ZU;2-J
Abstract
We have developed distributed-feedback ridge waveguide lasers based on AlGa (In)AsSb emitting at 1.72 mu m. The distributed feedback is obtained by fir st-order Cr-Bragg gratings defined on both sides of the laser ridge. The th reshold current under pulsed operation at room temperature was around 180 m A and an output power of 1.5 mW was obtained. The gratings lead to a side-m ode suppression ratio of 27 dB.