Photoluminescence at 1.54 mu m in sol-gel-derived, Er-doped BaTiO3 films

Nanostructured Er-doped BaTiO3 films were deposited by the sol-gel method o n SiO2/Si substrates. The spontaneous luminescence in the films at 1.54 mu m was observed under the excitation of both 514 and 980 nm lasers. Transien t photoluminescence showed that, for the Er:BaTiO3 film containing 3.0 mol% Er, the decay of the 1.54 mu m emission is a single exponential decay with a lie lifetime of similar to 5 ms. Concentration quenching was observed fo r the film containing 5.0 mol% Er, which was attributed to energy transfer and cross relaxation between closely sited Er3+ ions in the BaTiO3 lattice. (C) 2000 Elsevier Science S.A. All rights reserved.