A SILICON SINGLE-ELECTRON TRANSISTOR MEMORY OPERATING AT ROOM-TEMPERATURE (VOL 275, PG 649, 1997)

Authors
GUO LJ LEOBANDUNG E CHOU SY
Citation
Lj. Guo et al., A SILICON SINGLE-ELECTRON TRANSISTOR MEMORY OPERATING AT ROOM-TEMPERATURE (VOL 275, PG 649, 1997), Science, 277(5322), 1997, pp. 21-21
Citations number
2
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Science → ACNP
ISSN journal
00368075
Volume
277
Issue
5322
Year of publication
1997
Pages
21 - 21
Database
ISI
SICI code
0036-8075(1997)277:5322<21:ASSTMO>2.0.ZU;2-J