Effects of MeV energy titanium ion implants on the oxygen related defects centers in silica

Citation
Rh. Magruder et al., Effects of MeV energy titanium ion implants on the oxygen related defects centers in silica, J NON-CRYST, 274(1-3), 2000, pp. 282-288
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
274
Issue
1-3
Year of publication
2000
Pages
282 - 288
Database
ISI
SICI code
0022-3093(200009)274:1-3<282:EOMETI>2.0.ZU;2-U
Abstract
Silica samples were implanted with 4 MeV Ti2+ ions at nominal doses ranging from 0.1 to 5.0 x 10(15) cm(-2). Optical absorption was measured from 3.5 to 6.5 eV and in all spectra a local maximum at 5.0 eV and a shoulder at 5. 9 eV were observed. A second series of samples was implanted with 4 MeV Si2 + ions at nominal doses ranging from 0.5 to 3.0 x 10(15) cm(-2). Based on t he literature we assumed that Gaussian bands at 4.8, 5.01, 5.17, 5.88, and 7.15 eV comprised the observed spectra. Using Gaussian functions as basis s tates, linear fits to the data were performed yielding amplitudes for each band. Between 3.5 and 5.5 eV the fits were within +/-3%. At larger energies the fits were unsatisfactory. Non-linear fits with an additional, fully ad justable Gaussian function yielded a band at 6.4 eV with full width at half maximum similar to 0.5 eV and reduced the difference between the fit and t he data to <2% over the full range of the measurements. (C) 2000 Elsevier S cience B.V. All rights reserved.