Quantitative analysis of Ti-O-Si and Ti-O-Ti bonds in Ti-Si binary oxides by the linear combination of XANES

Citation
Wb. Kim et al., Quantitative analysis of Ti-O-Si and Ti-O-Ti bonds in Ti-Si binary oxides by the linear combination of XANES, J PHYS CH B, 104(36), 2000, pp. 8670-8678
Citations number
40
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF PHYSICAL CHEMISTRY B
ISSN journal
15206106 → ACNP
Volume
104
Issue
36
Year of publication
2000
Pages
8670 - 8678
Database
ISI
SICI code
1520-6106(20000914)104:36<8670:QAOTAT>2.0.ZU;2-P
Abstract
X-ray absorption near edge structure (XANES) of Ti K-edge of Ti-Si mixed ox ides and titania supported on silica with various Ti contents was studied t o investigate the fractions of Ti-O-Si and Ti-O-Ti bonds quantitatively by fitting the preedge of Ti K-edge with the linear combination of two referen ce XANES spectra. In mixed oxides, the fraction of Ti-O-Ti was increased up to 0.55 when Ti/Si was varied from 0.04 to 0.5. The greatest change of eac h fraction occurred around 0.15-0.2 of Ti/Si, which was coincident with the formation of anatase titania as observed by XRD. For titania supported on silica with a surface area of 300 m(2) g(-1), the preedge fitting results c ombined with XRD and XPS indicated that monolayer coverage was reached arou nd 7-10 wt % Ti loading where the amount of Ti in Ti-O-Si was saturated to 0.56 mmol-Ti/g-material. This work demonstrated the possibility of the quan tification of Ti-O-Si and Ti-O-Ti bonds in Ti-Si binary oxides by using the linear combination of reference XANES spectra.