CdTe photovaltic sintered films

II-VI semiconductors are of great importance because of their applications in various optoelectronics, integrated optics, solar cells and electro-opti c devices. CdTe is a suitable material for the fabrication of photovoltaic devices. We have prepared CdTe films in air atmosphere by the sintering met hod and studied fur their applications in photovoltaic devices. The energy band gap of these films are determined by reflection spectrum in wavelength range 400-900 nm. The band gap of CdTe sintered films come out to be 1.46 eV. The Schottky barrier height and the ideality factor are determined by t he current-voltage characteristics. The Schottky barrier height and idealit y factor for the Ag/CdTe Schottky junction are found to be 0.615 V and 1.13 6, respectively. X-ray diffraction patterns of these films are also reporte d. The XRD pattern shows no peaks of CdTe oxidation. (C) 2000 Elsevier Scie nce Ltd. All lights reserved.