With the aim of explaining the dependence of the steady-state electrodissol
ution current density (I) of Si in acidic fluoride media on total fluoride
concentration (C-F), pH, and mass transfer rate, a kinetic model is propose
d. The Si electrode is assumed to be covered by a thin SiO2 layer, formed b
y an electrochemical reaction at the Si/oxide interface, which undergoes di
ssolution by three parallel chemical reactions. These reactions convert SiO
2 to SiF62-, under the action of HF and HF2- and occur under mixed control;
their kinetics is assumed to be of the second order. Fast equilibria betwe
en fluoride species and H+ are assumed. The model is compared with experime
ntal results obtained by ourselves and with those in the literature. The C-
F, pH, and Ohm dependencies of the current density measured at a fixed pote
ntial in the electropolishing domain are well reproduced with an appropriat
e choice of the rate constants of the dissolution reactions, the only adjus
table parameters. It is shown that I depends on the angular speed of the el
ectrode (Ohm) in such a way that I-1 vs. Ohm(-1/2) plots are almost linear,
resembling traditional Koutecky-Levich behavior. (C) 2000 The Electrochemi
cal Society. S0013-4651(99)10-025-9. All rights reserved.