Aluminum deposition and nucleation on nitrogen-incorporated tetrahedral amorphous carbon electrodes in ambient temperature chloroaluminate melts

Citation
Jj. Lee et al., Aluminum deposition and nucleation on nitrogen-incorporated tetrahedral amorphous carbon electrodes in ambient temperature chloroaluminate melts, J ELCHEM SO, 147(9), 2000, pp. 3370-3376
Citations number
38
Categorie Soggetti
Physical Chemistry/Chemical Physics","Material Science & Engineering
Journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN journal
00134651 → ACNP
Volume
147
Issue
9
Year of publication
2000
Pages
3370 - 3376
Database
ISI
SICI code
0013-4651(200009)147:9<3370:ADANON>2.0.ZU;2-C
Abstract
The electrodeposition of aluminum on the atomically smooth nitrogen-incorpo rated tetrahedral amorphous carbon (taC:N) electrode in ambient temperature AlCl3/EMIC chloroaluminate melts has been interpreted using a prior model of three-dimensional diffusion controlled nucleation and growth. Aluminum r equires an unusually high overpotential for nucleation on taC:N because of the low density of intrinsic active sites, which act as critical nuclei dur ing the initial stage of deposition. The current-time characteristics of nu cleation on taC:N show a strong dependency on overpotential. Generation of additional, overpotential-induced active sites imposes a partial progressiv e nature on the overall nucleation process, resulting in a slight deviation from the limiting behavior of an ideal instantaneous nucleation model. (C) 2000 The Electrochemical Society. S0013-4651(99)11-076-0. All rights reser ved.