Use of 1,1-dimethylhydrazine in the atomic layer deposition of transition metal nitride thin films

Atomic layer deposition (ALD) of TiN,TaNx, NbN, and MoNx thin films from th e corresponding metal chlorides and 1,l-dimethylhydrazine (DMHy) was studie d. Generally, the films deposited at 400 degrees C exhibited better charact eristics compared to the films deposited at the same temperature using NH3 as the nitrogen source. In addition, films could be deposited at lower temp eratures down to 200 degrees C. Even though the carbon content in the films was quite high, in the range of 10 atom %, the results encourage further s tudies. Especially the effect of carbon on the barrier properties and the u se of other possibly less carbon-contaminating hydrazine derivatives should be studied. (C) 2000 The Electrochemical Society. S0013-4651(00)03-044-5. All rights reserved.