Heat capacity of 4H-SiC determined by differential scanning calorimetry

The heat capacity, C-p, of monocrystalline 4H-SiC has been studied in the i nterval 285-770 K using differential scanning calorimetry. For comparison m onocrystalline and powdered 6H-SiC have also been measured. A suitable anal ytical expression is proposed for interpretation of the experimental result s, which is applicable to that known from the literature C-p data as well. (C) 2000 The Electrochemical Society. S0013-4651(00)02-039-5. All rights re served.