Formation of high quality GaAs epilayers on InP substrates by using a patterned GaAs fusion layer

Both wafer fusion and heteroepitaxy technologies were successfully used to obtain high-quality GaAs layers on InP substrates where the lattice mismatc h was 3.7 %. Transmission electron microscopy and scanning electron microsc opy were employed to investigate dislocations at the interface and the grow th behavior of the GaAs layers grown on a patterned fusion layer on an InP substrate, respectively. We also performed double-crystal X-ray diffraction and photoluminescence measurements to study the structural and the optical properties of the epi-grown layers. It was confirmed that high quality GaA s layers can be grown on InP substrates by combining the wafer fusion metho d and the enhancement of the lateral growth rate in the patterned region.