Characterization of the hole capacitance of a hydrogenated amorphous silicon thin-film transistor

The C-V characteristics associated with hole accumulation in a-Si:II thin-f ilm transistors (TFTs) with n(+)-type source/drain contacts were determined . The capacitance was measured by using an ac voltage and quasi-static meth od. Ill the ac measurements, we observed the partial response of the hole c apacitance at low frequencies and at moderately high measurement temperatur es, A Full reponse of the hole capacitance was confirmed by quasi-static me asurements with a long delay time at room temperature. One possible mechani sm accounting: fur the frequency and temperature dependencies of the holt c apacitance is proposed.