Digital electron microscopy on advanced materials

Digital electron microscopy has been developed and applied to the structure analysis of advanced materials such as semiconductors and alloys. First of all, quantitative high-resolution electron microscopy was carried out on a Z-type faulted dipole in GaAs with the through-focus method. Through the q uantitative analysis of the high-resolution images, the atomic displacement around the stacking fault was accurately evaluated. Ln the analysis of ele ctron diffraction patterns of a Cu0.725Pd0.275 alloy, an energy filter was utilized to obtain electron diffraction patterns with a small background re moving the inelastically scattered electrons. From the analysis of diffuse scattering of the Cu0.725Pd0.275 alloy, the short-range order parameters we re quantitatively evaluated. Finally, it is pointed out that, based on the digital data of electron microscope images, the construction of the data ba se such as "EMILIA" (Electron Microscope image Library and Archive: http:// asma7.iamp.tohoku.ac.jp/EMILIA) is quite important for the future research of advanced materials characterization. (C) Elsevier Science Inc., 2000. Al l rights reserved.