Effect of p-doping profile on performance of strained InGaAs/InGaAsP multiple quantum well buried heterostructure laser diodes with Fe- or p/n/p-doped InP current blocking layer

The effect of p-doping profile on performance of InGaAs/InGaAsP strained MQ W BH LD with Fe-doped or p/n/p-doped InP current blocking layer was investi gated. LDs with a p-doped SCH exhibited a higher slope efficiency compared to those with an undoped SCH regardless of current blocking type. The obser ved high degree of nonlinearity in the light-output power and low character istic temperature of the semi-insulating blocking type lasers with a p-dope d SCH layer suggest that the interdiffusion of Fe and Zn across the interfa ce between p-doped SCH land p-InP:Zn) layer and SI-InP:Fe layer has given r ise to leakage currents in laser device. (C) 2000 Elsevier Science S.A. All rights reserved.