We present a simple and economical photoreflectance measurement methodology
that can easily be adapted to conventional scanning optical microscopes. L
n this design, the laser source is sine-wave modulated so that the second-h
armonic modulation distortion within the optical probe beam before and afte
r reflection off the sample surface can be monitored. The desired photorefl
ectance measurement, which is taken as the change of reflectance as a resul
t of varying the incident optical power, is then obtained from the change i
n the ratio of the fundamental and second-harmonic signals. We demonstrate
our set-up and technique by measuring the implantation damage in nitrogen-i
mplanted silicon samples.