STUDIES ON DEPOSITION PARAMETERS OF SILICON-NITRIDE FILMS PREPARED BYA SILANE NITROGEN PLASMA-ENHANCED-CHEMICAL-VAPOR-DEPOSITION PROCESS NITRIDE FILMS PREPARED BY A SILANE-NITROGEN

Authors
LEE KR SUNDARAM KB MALOCHA DC
Citation
Kr. Lee et al., STUDIES ON DEPOSITION PARAMETERS OF SILICON-NITRIDE FILMS PREPARED BYA SILANE NITROGEN PLASMA-ENHANCED-CHEMICAL-VAPOR-DEPOSITION PROCESS NITRIDE FILMS PREPARED BY A SILANE-NITROGEN, Journal of materials science. Materials in electronics, 5(5), 1994, pp. 255-259
Citations number
25
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Journal of materials science. Materials in electronics → ACNP
ISSN journal
09574522
Volume
5
Issue
5
Year of publication
1994
Pages
255 - 259
Database
ISI
SICI code
0957-4522(1994)5:5<255:SODPOS>2.0.ZU;2-8
Abstract
Silicon-nitride films were deposited by a plasma-enhanced-chemical-vap our-deposition (PECVD) technique using silane-nitrogen as the reactant -gas sources. The influence of the process parameters (such as the flo w ratio of the reactant gases, the pressure, the substrate temperature , the radio frequency (r.f.) power, the time of deposition and the ele ctrode spacing) on the deposition and etch rates were investigated and the experimental results are presented in detail.