INVESTIGATIONS ON THE NUCLEATION PARAMETERS OF INGAAS GROWN ON INP DURING LPE

The initial stages of LPE growth of the InGaAs ternary compound on an InP substrate were analysed using the classical heterogeneous nucleati on theory, incorporating lattice mismatch between the grown alloy and the substrate. The explicit expression for the lattice mismatch induce d supercooling for the growth of the chosen system was established, an d it was used to evaluate the nucleation parameters. It has been prove d theoretically that the nucleation barrier for the formation of InxGa 1-xAs on InP depends very strongly on the composition of the alloy; th e condition for the growth of good quality InGaAs on InP was calculate d.