MODIFICATION OF THE PROPERTIES OF HTSC YBCO THIN-FILMS ON SILICON BY SUPERFAST LASER ANNEALING IN OXYGEN WITH A CW CO2-LASER

Authors
SERBESOV VS ATANASOV PA TOMOV RI
Citation
Vs. Serbesov et al., MODIFICATION OF THE PROPERTIES OF HTSC YBCO THIN-FILMS ON SILICON BY SUPERFAST LASER ANNEALING IN OXYGEN WITH A CW CO2-LASER, Journal of materials science. Materials in electronics, 5(5), 1994, pp. 272-274
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Journal of materials science. Materials in electronics → ACNP
ISSN journal
09574522
Volume
5
Issue
5
Year of publication
1994
Pages
272 - 274
Database
ISI
SICI code
0957-4522(1994)5:5<272:MOTPOH>2.0.ZU;2-S
Abstract
The use of superfast CW CO2 laser annealing in O2 for modifying the pr operties of laser deposited Y1Ba2Cu3O7-x thin films is described. The film resistivity could be controlled reversibly by laser irradiation a t 40 WCM-2. The resistivity was measured in situ during the annealing process.