Synthesis of crystalline carbon nitride thin films by electron cyclotron resonance (ECR) sputtering method

Crystalline carbon nitride thin films were deposited on Si (100) substrate by the electron cyclotron resonance (ECR) sputtering method using a carbon target and a nitrogen atmosphere. The compositional and structural properti es of the films were characterized by Xray photoelectron spectroscopy, X-ra y diffraction, Raman spectroscopy, scanning electron microscopy, transmissi on electron microscopy, and transmission electron diffraction. The maximum value of the nitrogen to carbon ratio of 1.35 was obtained at a substrate b ias potential of -50 V and ambient temperature. The X-ray diffraction and e lectron diffraction patterns of the films deposited at elevated temperature revealed that the films were composed of some crystalline phases. The surf ace morphology of the crystalline films deposited at elevated temperatures, as observed by scanning electron microscopy, indicated that the average gr ain size was about 500 nm. Optical emission spectroscopy was used to study the behavior of activated species in the plasma.