SEMICONDUCTING BEHAVIOR AND PRESSURE-DEPENDENCE OF ELECTRICAL-RESISTIVITY IN TIN MONOSELENIDE SINGLE-CRYSTALS GROWN BY A MODIFIED DIRECT VAPOR TRANSPORT TECHNIQUE

Authors
AGARWAL A CHAKI SH PATEL SG LAKSHMINARAYANA D
Citation
A. Agarwal et al., SEMICONDUCTING BEHAVIOR AND PRESSURE-DEPENDENCE OF ELECTRICAL-RESISTIVITY IN TIN MONOSELENIDE SINGLE-CRYSTALS GROWN BY A MODIFIED DIRECT VAPOR TRANSPORT TECHNIQUE, Journal of materials science. Materials in electronics, 5(5), 1994, pp. 287-290
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Journal of materials science. Materials in electronics → ACNP
ISSN journal
09574522
Volume
5
Issue
5
Year of publication
1994
Pages
287 - 290
Database
ISI
SICI code
0957-4522(1994)5:5<287:SBAPOE>2.0.ZU;2-7
Abstract
Tin monoselenide single crystals were grown successfully by a modified direct vapour transport technique. The crystals were found to be semi conducting in nature. The influence of pressure on the electrical resi stivity of the crystals grown was studied and the results explained on the basis of a transition from a predominantly two-dimensional materi al to a more three-dimensional one.