Simulation study on Si and Ge film growth by cluster deposition

Si and Ge thin film growth from cluster beams has been investigated with mo lecular-dynamics simulations utilizing the Stillinger-Weber (SW) two- and t hree-body interaction potentials. The spreading of cluster atoms and the st ructure of grown films have been studied as a function of incident cluster velocity. We found that higher surface diffusion and spreading of the depos ited clusters, which were achieved with a moderate cluster velocity, are ne cessary for the epitaxial film. However, a very high cluster velocity leads to the damage of the substrate and the growing films. The substrate temper ature also plays an important role in the growth of the films. (C) 2000 Els evier Science B.V. All rights reserved.