Variation of strain/defects in H+-implanted single crystal silicon

Single crystal silicon samples were implanted with H- ions at an energy of 30 KeV, and a dose of 4 x 10(16)/cm(2). These samples were annealed in the temperature range from 100 degrees C to 500 degrees C. Four-crystal X-ray d iffractometer (FCXRD), cross-sectional transmission electron microscopy (XT EM), Rutherford backscattering spectroscopy and channeling (RBS/C) were use d to characterize the distribution and magnitude of the strain and extended defects in the samples. Elastic recoil detection analysis (ERDA) was used to measure the redistribution of hydrogen in Si samples during annealing. S train distributions in the samples were simulated from the rocking curves b y computer. The results help to understand the evolution of the strain and defects during annealing in the high dose H+-implanted silicon samples. (C) 2000 Elsevier Science B.V. All rights reserved.