Ion beam mixing of Fe with SiO2 has been studied in details, using Rutherfo
rd backscattering spectroscopy (RBS) technique. Fe thin films of different
thicknesses ranging from 23 to 49 nm were deposited on SiO2 by thermal evap
oration method. Specimens were irradiated with Ne+ and Ar+ ions at differen
t fluences (ranging from 5 x 10(15) to 2 x 10(17) ions/cm(2)) and at differ
ent temperatures (RT, 423 and 573 K. It is found that the square of diffusi
on length is proportional to the ion fluence implying that mixing is due to
ballistic effects when irradiated with Ne+, and Ar+ ions. Long-range diffu
sional type of mixing similar to that observed in Fe/Si system is insignifi
cant in case of Fe/SiO2 system. As the temperature is increased, keeping ot
her parameters same (the ion mass, fluence and F-d), there is minor increas
e in the diffusion length. (C) 2000 Elsevier Science B.V. All rights reserv
ed.