A microchip cavity including a half-monolithic Nd:YAG-KNbO3 chip and a seco
nd KNbO3 crystal is presented. An output power of up to 30 mW at 473 nm pum
ped by a single stripe 1-W at 808-nm diode is achieved. The laser can be op
erated in either single-longitudinal or multilongitudinal mode by rotation
of the second frequency-doubling crystal to 0 degrees or 90 degrees from th
e first one. The cw output noise is less than 2% for both cases. (C) 2000 O
ptical Society of America.