Cd0.8Mn0.2Te :(In/Al) - Deep Level Transient Spectroscopy

Deep levels in Cd0.8Mn0.2Te doped with In and Al mere studied with Deep Lev el Transient Spectroscopy. In In-doped Cd0.8Mn0.2Te, five electron traps we re observed with activation energies of 0.23, 0.18, 0.38, 0.48 and 0.65 eV. In the material doped with Al, three electron traps were found with activa tion energies equal to 0.33. 0.47 and 0.76 eV. Metastable effects due to DX centers have been observed only for the In-doped samples. The value of bin ding energy for In-related DX center in Cd0.8Mn0.2Te obtained experimentall y was found to be equal to 0.18 eV. (C) 2000 Elsevier Science B.V. All righ ts reserved.