Direct temperature metrology helps minimize CA-resist CD variation

Citation
Jm. Parker et al., Direct temperature metrology helps minimize CA-resist CD variation, SOL ST TECH, 43(9), 2000, pp. 139
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
SOLID STATE TECHNOLOGY
ISSN journal
0038111X → ACNP
Volume
43
Issue
9
Year of publication
2000
Database
ISI
SICI code
0038-111X(200009)43:9<139:DTMHMC>2.0.ZU;2-S
Abstract
FEB temperature is critical during the processing of chemically amplified 2 48nm land below) photoresists. Variations in temperature directly affect CD s of final resist patterns. Many other process parameters can also influenc e CDs, however. Work with an instrumented wafer for direct, precise tempera ture measurement and mapping of wafer temperature over time during a FEB cy cle has helped separate out CD variations caused by FEB temperature from th ose due to other factors. This has allowed improvement in the control of FE B hotplate temperature, virtually eliminating FEB temperature variation as a significant cause of CD variability.