Application of SIMS to measure the spatial distribution of N+ implantationdose in the internal surface of small hollow cylinders for wear reduction applications

Ion implantation technology is used for industrial tools and component trea ting. Because of its line-of-sight geometry, it is always difficult to dete rmine a priori the spatial dose and angle distribution of the implanted ion s onto tools of complex geometry, especially when both the beam and the sam ple are in motion during the treatment, and the tool details are of dimensi ons smaller or comparable to the beam cross-section. Secondary ion mass spectrometry (SIMS) is attractive for a posteriori dose measurements because of its spatial resolution (analysis crater <100 mu m), its wide measurement range and rapidity, but its application is normally d ifficult for accurate dose and depth profiling in the case of high doses or complex matrices such as steels or samples that are not hat, In this work it is shown how SIMS can be used to determine the nitrogen imp lantation dose and its distribution on the surface of small silicon samples placed on the surface of the industrial component to be studied. This was possible owing to the good linearity and repeatability found in dose determ ination by SIMS for Nf implantation into silicon over a wide range up to 10 (17) ions cm(-2). An application of the method proposed in this work is reported in the case of implantation onto the internal surface of a hollow cylinder of diameter 25 mm, The dose measurements were performed by SIMS on silicon Rat samples placed in a properly cut steel cylinder. These samples were implanted with N+ at 1 00 keV, and the cylinder was rotating around its longitudinal axis, which w as inclined at 65 degrees with respect to the beam line. The dose was contr olled by a Faraday cup, fixed to the implantation chamber. The accurately calculated dose distribution along the height of the cylinde r was compared with experimental data, showing very good agreement with the dose distribution measured on the silicon samples, Copyright (C) 2000 John Wiley & Sons, Ltd.