XPS and SIMS depth profiling of oxynitrides

The scaling down of mos devices into the submicron regime needs high-qualit y ultrathin (8 nm or less) gate dielectrics. Silicon oxide nitridation is w idely used to achieve these requirements, Analytical issues in this field i nclude nitrogen quantitative depth distribution and chemical characterizati on. In this work we have characterized oxynitride layers using two complementar y techniques: SIMS and XPS, The study has been carried out on samples grown using different precursors either in conventional furnaces or by rapid the rmal processes, Comparison between quantified SIMS depth profiles and the X PS HF etch-back method shows good agreement in nitrogen profile shape and q uantification, In addition, XPS analyses have provided suitable chemical ch aracterization of the different growth processes. We demonstrate that this analytical approach is really effective for the ph ysicochemical characterization of present generation oxynitrides. Copyright (C) 2000 John Wiley & Sons, Ltd.