High-resolution Auger electron spectroscopy has been used to study selenium
surface segregation on an Se-doped FeSi alloy. The surface segregation of
Se and impurities such as C, P and S was measured in situ in the analysis c
hamber of an Auger spectrometer under ultrahigh vacuum conditions in the te
mperature range 200-850 degrees C, At elevated temperatures (T greater than
or equal to 850 degrees C), co-segregation of Se and S was observed to occ
ur by means of x-ray photoelectron spectroscopy. It was also found that the
surface segregation of selenium critically affected reconstruction of the
(110) surface microstructure of the FeSi alloy, resulting in the formation
of (100) planes at 850 degrees C. Copyright (C) 2000 John Wiley & Sons, Ltd
.