Semi-quantitative and non-destructive analysis of impurities at a buried interface: Na and the CdS/Cu(In,Ga)Se-2 heterojunction

Citation
C. Heske et al., Semi-quantitative and non-destructive analysis of impurities at a buried interface: Na and the CdS/Cu(In,Ga)Se-2 heterojunction, SURF INT AN, 30(1), 2000, pp. 459-463
Citations number
19
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE AND INTERFACE ANALYSIS
ISSN journal
01422421 → ACNP
Volume
30
Issue
1
Year of publication
2000
Pages
459 - 463
Database
ISI
SICI code
0142-2421(200008)30:1<459:SANAOI>2.0.ZU;2-4
Abstract
We demonstrate how a combination of photoelectron spectroscopy and x-ray em ission spectroscopy can be utilized to derive semi-quantitative information about the localization of impurities at buried interfaces. In the case of the CdS/Cu(In,Ga)Se-2 (CIGS) thin-film solar cell heterojunction, segregate d Na, which stems from the soda-lime glass substrate or is deliberately add ed, plays an important role. We find that almost all Na atoms are located a t the external CIGS surface or at the CdS/CIGS interface, and that the Na c oncentration in the bulk of the CIGS film is <1 ppm, Moreover, we show that the Na surface coverage at internal CIGS surfaces is significantly lower t han at the external CIGS surface or CdS/CIGS interface, which demonstrates that the internal surfaces may not be regarded merely as a special case of the external surface. Copyright (C) 2000 John Wiley & Sons, Ltd.