Molecular beam epitaxy of p-hexaphenyl on GaAs(111)

Hexaphenyl grows on GaAs(111) in elongated three-dimensional islands severa l micrometres long. The characteristic island shape (a drop-like or pyramid al head with a thinner tail) is demonstrated By atomic force microscopy, Us ing x-ray diffraction and transmission electron diffraction, the three-dime nsional islands are found to be perfectly crystalline, On the basis of the bulk structure of hexaphenyl, three contact planes of hexaphenyl with GaAs( 111) are identified: ((3) over bar 12), (11 (2) over bar) and (1001), These results suggest that the epitaxial hexaphenyl islands consist of different ly orientated domains. It is shown that the techniques used are appropriate for the characterization of stable organic epitaxial islands. Copyright (C ) 2000 John Wiley & Sons, Ltd.