High-temperature edge luminescence from cubic cadmium selenide layers

High-temperature electrical and luminescent properties of beta-CdSe layers synthesized by the solid-state substitution reaction were studied. In the t emperature interval from 290 to 450 K, the edge emission band related to th e annihilation of free excitons inelastically scattered from free charge ca rriers dominates in the photoluminescence spectrum. The binding energies of the excitons and optical phonons were measured. The bandgap width and the temperature coefficient of its variation were determined. (C) 2000 MAIK "Na uka/Interperiodica".