Controlled growth of quasibicrystal zinc oxide structures

The first results on the controlled growth of quasibicrystal structures con taining interblock boundaries in epitaxial zinc oxide layers on sapphire (a lpha-Al2O3) are reported. The structures with boundaries oriented in a pres et direction can be used as a base for submicron microelectronic devices. U sing the method of buffer layers, it is possible to obtain highly oriented layers of (11 (2) over bar 0)ZnO and (0001)ZnO with clear boundaries betwee n blocks on the same (10 (1) over bar 2)Al2O3 substrate surface. Data on th e features of structure and morphology of these layers are presented. (C) 2 000 MAIK "Nauka/Interperiodica".