Single-electron tunneling effects in thin Nylon 11 films containing gold nanoparticles

Authors
Inoue, Y Fujii, M Inata, M Hayashi, S Yamamoto, K Akamatsu, K Deki, S
Citation
Y. Inoue et al., Single-electron tunneling effects in thin Nylon 11 films containing gold nanoparticles, THIN SOL FI, 372(1-2), 2000, pp. 169-172
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
372
Issue
1-2
Year of publication
2000
Pages
169 - 172
Database
ISI
SICI code
0040-6090(20000822)372:1-2<169:STEITN>2.0.ZU;2-G
Abstract
Very thin Nylon 11 films (less than or equal to 20 nm in thickness) contain ing Au nanoparticles were prepared, and current-voltage (I-V) characteristi cs in the vertical direction of the films were studied. The plan and cross- sectional transmission electron microscopic images revealed that Au particl es are spontaneously aligned in the middle of the upper and lower electrode s and Nylon 11 tunneling barriers are naturally formed between Au nanoparti cles and electrodes. Clear Coulomb staircases were observed in the I-V char acteristics. (C) 2000 Elsevier Science S.A. All rights reserved.