EBIC and luminescence mapping of CdTe/CdS solar cells (vol 361, pg 364, 2000)

Citation
Pr. Edwards et al., EBIC and luminescence mapping of CdTe/CdS solar cells (vol 361, pg 364, 2000), THIN SOL FI, 372(1-2), 2000, pp. 284-291
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
372
Issue
1-2
Year of publication
2000
Pages
284 - 291
Database
ISI
SICI code
0040-6090(20000822)372:1-2<284:EALMOC>2.0.ZU;2-U
Abstract
The roles of EBIC, OBIC (LBIC), spatially resolved spectral response and ca thodoluminescence in determining the influence of grain boundaries in the C dTe/CdS solar cell are critically reviewed. Conventional use of EBIC in the determination of junction position and L-e in thin films is assessed. Dire ct evidence of grain boundary passivation from front-wall (illumination geo metry) OBIC and EBIC is described. The use of non-standard injection-depend ent EBIC to probe near grain boundary doping, and a model of grain boundary passivation is outlined. New results of the use of cathodoluminescence mic roscopy to probe individual grains are presented and discussed with regard to passivation. (C) 2000 Elsevier Science S.A. All rights reserved.