Concept of nanometric high density charge coupled devices

We present a concept of novel ultra-small charge transfer devices based on III-V quantum heterostructures. The device function is based on the possibi lity of a lateral carrier transmission between low-dimensional structures. The latter can be obtained using material or geometrical confinement. The p rincipal carrier transfer mechanisms are tunneling and thermionic emission with applied voltage. These properties can be used in planar integrated sys tems to perform storage and logic functions with a high integration density and efficiency. Charge Coupled Device matrix with a density of up to 1000 storage units per mu m(2) can be obtained. The reduction of the quantum wel l size to zero dimensional structures will lead to a further increase of th e integration density up to the Tbit region.