The surface structure of Ga2O3-Al2O3 catalysts was investigated by TR and E
SR spectroscopy. As a result of modification by gallia, alumina hydroxyl co
ver changes significantly. The new band 3680-3688 cm(-1) ascribed to bridgi
ng structure Ga-OH-Al has been observed. By means of IR spectroscopy, adsor
bed CO and ESR with anthraquinone as a probe molecule, two types of Lewis a
cid sites and their concentration were defined. These sites are coordinatel
y unsaturated aluminium cation Al-cus(3+) and coordinately unsaturated gall
ium cation Ga-cus(3+). In the case of Ga2O3-Al2O3 catalysts with a gallia c
ontent of 1-10 mol%, surface Lewis acid properties are in accordance with t
he assumption of solid solution formation. Only under significantly non-equ
ilibrium conditions (large excess of dopant - 20 mol% Ga2O3-Al2O3, relative
ly low temperature of calcination -720 K, short time of interaction - 4 h)
it becomes possible to stabilize highly dispersed state of gallium oxide, f
or which the characteristic feature is high concentration and local regulat
ion of Ga-cus(3+) on the surface. it was shown that on the alumina surface
there an favourable (more than in the case of pure gallia) conditions for t
he Ga-cus(3+) formation. (C) 2000 Elsevier Science B.V. All rights reserved
.