Citation
S. Shimokawa et al., Atomic oxygen-induced surface processes: D2O formation and D-2 desorption on the D/Si(100) surface, APPL SURF S, 167(1-2), 2000, pp. 94-98
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332
→ ACNP
Volume
167
Issue
1-2
Year of publication
2000
Pages
94 - 98
Database
ISI
SICI code
0169-4332(20001016)167:1-2<94:AOSPDF>2.0.ZU;2-Z
Abstract
The atomic oxygen-induced surface reaction has been studied on the D/Si(100
) surfaces. The mass spectroscopic method reveals that D-2 desorption as we
ll as D2O formation are induced upon collision of oxygen atoms with the D/S
i(100) surfaces. As the oxygen atoms are taken into the Si-Si bonds, the de
sorption of D-2 and D2O molecules is terminated despite the survival of the
D adatoms. We propose a possible mechanism of the oxygen-induced D2O forma
tion and D-2 desorption. (C) 2000 Elsevier Science B.V. All rights reserved
.