Chemical passivation of Si(111) capped by a thin GaSe layer

Authors
Rudolph, R Pettenkofer, C Klein, A Jaegermann, W
Citation
R. Rudolph et al., Chemical passivation of Si(111) capped by a thin GaSe layer, APPL SURF S, 167(1-2), 2000, pp. 122-124
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
167
Issue
1-2
Year of publication
2000
Pages
122 - 124
Database
ISI
SICI code
0169-4332(20001016)167:1-2<122:CPOSCB>2.0.ZU;2-K
Abstract
An ultrathin layer of GaSe was grown on a hydrogen-terminated Si(lll) subst rate by molecular beam epitaxy. Substrate and epilayer were investigated by photoemission (XPS and UPS) and electron diffraction (LEED) immediately af ter sample preparation and after storage of 30 days in air. The tendency to surface oxidation is strongly reduced for the GaSe-covered sample compared to a hydrogen-terminated sample. (C) 2000 Elsevier Science B.V. All rights reserved.