Macroscopic polarization, both of intrinsic and piezoelectric nature, is un
usually strong in III-V nitrides, and the built-in electric fields in the l
ayers of nitride-based nanostructures, stemming from polarization changes a
t heterointerfaces, have a major impact on the properties of single and mul
tiple quantum wells, high mobility transistors, and thin films. The concept
s involved in the theory and applications of polarization in nitrides have
encountered some resistance in the field. Here we discuss critically 10 "pr
opositions" aimed at clarifying the main controversial issues. (C) 2000 Els
evier Science B.V. All rights reserved.