Polarization fields in nitride nanostructures: 10 points to think about

Citation
F. Bernardini et V. Fiorentini, Polarization fields in nitride nanostructures: 10 points to think about, APPL SURF S, 166(1-4), 2000, pp. 23-29
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
23 - 29
Database
ISI
SICI code
0169-4332(20001009)166:1-4<23:PFINN1>2.0.ZU;2-W
Abstract
Macroscopic polarization, both of intrinsic and piezoelectric nature, is un usually strong in III-V nitrides, and the built-in electric fields in the l ayers of nitride-based nanostructures, stemming from polarization changes a t heterointerfaces, have a major impact on the properties of single and mul tiple quantum wells, high mobility transistors, and thin films. The concept s involved in the theory and applications of polarization in nitrides have encountered some resistance in the field. Here we discuss critically 10 "pr opositions" aimed at clarifying the main controversial issues. (C) 2000 Els evier Science B.V. All rights reserved.