Spin-polarized electron transport and emission from strained superlattices

Citation
An. Ambrajei et al., Spin-polarized electron transport and emission from strained superlattices, APPL SURF S, 166(1-4), 2000, pp. 40-44
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
40 - 44
Database
ISI
SICI code
0169-4332(20001009)166:1-4<40:SETAEF>2.0.ZU;2-O
Abstract
Polarized electron emission from a series of new strained short-period AlIn GaAs/AlGaAs superlattices (SLs) is investigated. The In layer content was c hosen to give minimal conduction band offset with large strain splitting of the V-band. Simultaneous changing of Al content in both SL layers provides variation of the structure band gap. We demonstrate that tuning of the SL to the excitation energy can be achieved without loss of the electron polar ization. The polarization of up to 84% was measured at room temperature. (C ) 2000 Elsevier Science B.V. All rights reserved.