Optical properties of as grown and ion implanted (Ar+,N-2(+),alpha) GaAs nipi doping superlattices

Authors
Kunert, HW Malherbe, JB Brink, DJ Odendaal, RQ Prinsloo, LC Camassel, J Allegre, J Zeaiter, K Llinares, C
Citation
Hw. Kunert et al., Optical properties of as grown and ion implanted (Ar+,N-2(+),alpha) GaAs nipi doping superlattices, APPL SURF S, 166(1-4), 2000, pp. 77-81
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
77 - 81
Database
ISI
SICI code
0169-4332(20001009)166:1-4<77:OPOAGA>2.0.ZU;2-Y
Abstract
A brief review of the optical properties of GaAs nipi doping superlattices (DSLs) subjected to N-2(+), Ar+ ions, and alpha particle bombardment is giv en. Several experimental techniques, such as low temperature CW and time re solved photoluminescence (CW and TR-LTPL) as well as Raman spectroscopy (RS ) and spectroscopic ellipsometry (SE) have been used to detect new opticall y active bands. An attempt is made to explain the origin of these new bands . (C) 2000 Elsevier Science B.V. All rights reserved.