Investigation of the atomic crystal plane relief by X-ray epitaxial film interferometer

Translation Moire pictures were first observed in double crystal X-ray topo graphs recorded for the epitaxial Si/Si porous layer/Si substrate heterosys tem. The relief of atomic (hkl) planes, which are usually transformed into curved surfaces in real epitaxial films, can be studied using these picture s. Their relief amplitude is registered with accuracy better than 0.1 nm. D istorted crystal lattice areas vary from dozens micrometers to several mill imeters along the directions parallel to the interface. The effect of techn ological factors non-registered before on the lattice distortions is observ ed. Absorbates are found to influence the thickness of a porous Si layer un der ordinary conditions as well as in organic solvents (toluene and acetone ). (C) 2000 Elsevier Science B.V. All rights reserved.