Electronic surface structure of CoSi2(111)/Si(111): implications for ballistic electron-emission microscopy currents

Citation
K. Reuter et al., Electronic surface structure of CoSi2(111)/Si(111): implications for ballistic electron-emission microscopy currents, APPL SURF S, 166(1-4), 2000, pp. 103-107
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
103 - 107
Database
ISI
SICI code
0169-4332(20001009)166:1-4<103:ESSOCI>2.0.ZU;2-0
Abstract
Using a decimation technique, and imposing electrostatic self-consistency, we compute the surface electronic structure of various CoSi2(111)/Si(111) p hases. The projected band structures and LDOS indicate a richness of surfac e related features. For the (1 x 1)Co-rich termination excellent agreement with experimental data and a recent DFT investigation is obtained. Strongly localized surface states on the high chain atoms of the (2 x 1) Pandey-cha in like reconstruction are identified as causing the experimentally observe d surface topography induced contrast in Ballistic Electron Emission Micros copy (BEEM) images of such films. (C) 2000 Published by Elsevier Science B. V.