Electronic structure, conductivity and carrier mobility in very thin epitaxial CrSi(111) layers with Si(111) root 3 X root 3/30 LEED pattern

Authors
Galkin, NG Konchenko, AV Goroshko, DL Maslov, AM Vavanova, SV Kosikov, SI
Citation
Ng. Galkin et al., Electronic structure, conductivity and carrier mobility in very thin epitaxial CrSi(111) layers with Si(111) root 3 X root 3/30 LEED pattern, APPL SURF S, 166(1-4), 2000, pp. 113-118
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
113 - 118
Database
ISI
SICI code
0169-4332(20001009)166:1-4<113:ESCACM>2.0.ZU;2-6
Abstract
In situ Hall measurements, ex situ Hall and Seebeck coefficient temperature measurements of very thin (0.3-2.4 nm) CrSi(111)epitaxial layers with Si(1 11)root 3 X root 3/30 degrees LEED pattern are presented. The sheet p-type conductivity in CrSi(111) layers was observed from the chromium thicknesses of 0.9 nm. Chromium monosilicide layer (2.4 nm) displayed the metallic pro perties at room temperature by optical spectroscopy data. Sheet hole concen tration was nearly constant in the temperature range of 300-500 K, but acti vated at high temperatures. (C) 2000 Elsevier Science B.V. All rights reser ved.