Raman spectroscopy of surface phonons on Sb-terminated Si(001)

We study the surface structure of Sb-terminated singular (on-axis) and vici nal (4 degrees offcut in [110]) Si(001) by Raman spectroscopy (RS). In the Raman spectra three surface phonons with A(1)-symmetry are identified at 80 cm(-1), 130.5 cm(-1) and 162 cm(-1). The polarisation dependent Raman scat tering intensities for the singular and vicinal samples are found to be cor related with the different surface reconstructions. After deposition of Sb at 260 degrees C and further annealing to 400 degrees C and 600 degrees C, a nearly balanced ratio of (2 x 1):(1 x 2) domains for the singular sample and a predominantly (2 x 1) reconstructed surface for the vicinal sample is derived from RS, in agreement with LEED results. In contrast, after Sb dep osition at 600 degrees C, a balanced ratio of (2 x 1) and (1 x 2) reconstru cted domains is found for vicinal as well as for singular Si(001). (C) 2000 Elsevier Science B.V. All rights reserved.